Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
Identifieur interne : 002E19 ( Main/Repository ); précédent : 002E18; suivant : 002E20Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots
Auteurs : RBID : Pascal:11-0330409Descripteurs français
- Pascal (Inist)
- Mécanisme croissance, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Traitement par plasma, Epitaxie jet moléculaire, Réaction dirigée, Photoluminescence, Déplacement raie, Déplacement vers le bleu, Effet champ électrique, Structure cristalline, Orientation cristalline, Nitrure de gallium, Nitrure d'indium, Confinement, Recombinaison non radiative, Puits quantique, Polarité, InGaN, GaN, Substrat GaN, 6855A, 8105E, 8107T, 8535B.
English descriptors
- KwdEn :
- Blue shift, Confinement, Crystal orientation, Crystal structure, Electric field effects, Gallium nitride, Growth mechanism, III-V compound, III-V semiconductors, Indium nitride, Molecular beam epitaxy, Nanostructured materials, Non radiative recombination, Photoluminescence, Plasma assisted processing, Polarity, Quantum dots, Quantum wells, Spectral line shift, Template reaction.
Abstract
We report a comparison of the plasma-assisted MBE growth of polar (0 0 0 1) and semipolar (1 1 -2 2) -oriented InGaN/GaN quantum dots (QDs) grown simultaneously on GaN templates. The photoluminescence (PL) from semipolar QDs shows a systematical blueshift in comparison to the respective polar samples. Notwithstanding the variation in the internal electric field between the two samples, the observed shift in the PL spectrum can be attributed to the different In incorporation in the two crystallographic orientations. The evolution of PL intensity with temperature confirms the three-dimensional carrier confinement, which results in an attenuation of nonradiative recombination effects in comparison with quantum well structures.
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Sinha</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CEA/CNRS group "Nanophysique et semiconducteurs", INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Kotsar, Y" uniqKey="Kotsar Y">Y. Kotsar</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CEA/CNRS group "Nanophysique et semiconducteurs", INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Kandaswamy, P K" uniqKey="Kandaswamy P">P. K. Kandaswamy</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CEA/CNRS group "Nanophysique et semiconducteurs", INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Dimitrakopulos, G P" uniqKey="Dimitrakopulos G">G. P. Dimitrakopulos</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Aristotle University of Thessaloniki</s1><s3>GRC</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Aristotle University of Thessaloniki</wicri:noRegion></affiliation></author><author><name sortKey="Kehagias, Th" uniqKey="Kehagias T">Th. Kehagias</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Aristotle University of Thessaloniki</s1><s3>GRC</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Aristotle University of Thessaloniki</wicri:noRegion></affiliation></author><author><name sortKey="Komninou, Ph" uniqKey="Komninou P">Ph. Komninou</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Aristotle University of Thessaloniki</s1><s3>GRC</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Grèce</country><wicri:noRegion>Aristotle University of Thessaloniki</wicri:noRegion></affiliation></author><author><name sortKey="Nataf, G" uniqKey="Nataf G">G. Nataf</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CNRS-CRHEA, rue Bernard Grégory, Sophia-Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="De Mierry, P" uniqKey="De Mierry P">P. De Mierry</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>CNRS-CRHEA, rue Bernard Grégory, Sophia-Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region><settlement type="city">Valbonne</settlement></placeName></affiliation></author><author><name sortKey="Monroy, E" uniqKey="Monroy E">E. Monroy</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>CEA/CNRS group "Nanophysique et semiconducteurs", INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0330409</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0330409 INIST</idno><idno type="RBID">Pascal:11-0330409</idno><idno type="wicri:Area/Main/Corpus">002D95</idno><idno type="wicri:Area/Main/Repository">002E19</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Blue shift</term><term>Confinement</term><term>Crystal orientation</term><term>Crystal structure</term><term>Electric field effects</term><term>Gallium nitride</term><term>Growth mechanism</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium nitride</term><term>Molecular beam epitaxy</term><term>Nanostructured materials</term><term>Non radiative recombination</term><term>Photoluminescence</term><term>Plasma assisted processing</term><term>Polarity</term><term>Quantum dots</term><term>Quantum wells</term><term>Spectral line shift</term><term>Template reaction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Mécanisme croissance</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Point quantique</term><term>Nanomatériau</term><term>Traitement par plasma</term><term>Epitaxie jet moléculaire</term><term>Réaction dirigée</term><term>Photoluminescence</term><term>Déplacement raie</term><term>Déplacement vers le bleu</term><term>Effet champ électrique</term><term>Structure cristalline</term><term>Orientation cristalline</term><term>Nitrure de gallium</term><term>Nitrure d'indium</term><term>Confinement</term><term>Recombinaison non radiative</term><term>Puits quantique</term><term>Polarité</term><term>InGaN</term><term>GaN</term><term>Substrat GaN</term><term>6855A</term><term>8105E</term><term>8107T</term><term>8535B</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a comparison of the plasma-assisted MBE growth of polar (0 0 0 1) and semipolar (1 1 -2 2) -oriented InGaN/GaN quantum dots (QDs) grown simultaneously on GaN templates. The photoluminescence (PL) from semipolar QDs shows a systematical blueshift in comparison to the respective polar samples. Notwithstanding the variation in the internal electric field between the two samples, the observed shift in the PL spectrum can be attributed to the different In incorporation in the two crystallographic orientations. The evolution of PL intensity with temperature confirms the three-dimensional carrier confinement, which results in an attenuation of nonradiative recombination effects in comparison with quantum well structures.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>323</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Growth and characterization of polar (0 0 0 1) and semipolar (11-22) InGaN/GaN quantum dots</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1></fA09><fA11 i1="01" i2="1"><s1>DAS (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>SINHA (P.)</s1></fA11><fA11 i1="03" i2="1"><s1>KOTSAR (Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>KANDASWAMY (P. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>DIMITRAKOPULOS (G. P.)</s1></fA11><fA11 i1="06" i2="1"><s1>KEHAGIAS (Th.)</s1></fA11><fA11 i1="07" i2="1"><s1>KOMNINOU (Ph.)</s1></fA11><fA11 i1="08" i2="1"><s1>NATAF (G.)</s1></fA11><fA11 i1="09" i2="1"><s1>DE MIERRY (P.)</s1></fA11><fA11 i1="10" i2="1"><s1>MONROY (E.)</s1></fA11><fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>CEA/CNRS group "Nanophysique et semiconducteurs", INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs</s1><s2>38054 Grenoble</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>10 aut.</sZ></fA14><fA14 i1="02"><s1>Aristotle University of Thessaloniki</s1><s3>GRC</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>CNRS-CRHEA, rue Bernard Grégory, Sophia-Antipolis</s1><s2>06560 Valbonne</s2><s3>FRA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1><s2>Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ></fA15><fA15 i1="02"><s1>University of Hambourg</s1><s3>DEU</s3><sZ>2 aut.</sZ></fA15><fA15 i1="03"><s1>University of Bochum</s1><s3>DEU</s3><sZ>3 aut.</sZ></fA15><fA20><s1>161-163</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000190370280390</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>16 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0330409</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a comparison of the plasma-assisted MBE growth of polar (0 0 0 1) and semipolar (1 1 -2 2) -oriented InGaN/GaN quantum dots (QDs) grown simultaneously on GaN templates. The photoluminescence (PL) from semipolar QDs shows a systematical blueshift in comparison to the respective polar samples. Notwithstanding the variation in the internal electric field between the two samples, the observed shift in the PL spectrum can be attributed to the different In incorporation in the two crystallographic orientations. The evolution of PL intensity with temperature confirms the three-dimensional carrier confinement, which results in an attenuation of nonradiative recombination effects in comparison with quantum well structures.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15A</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A05H</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07T</s0></fC02><fC02 i1="04" i2="X"><s0>001D03F18</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Composé III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>III-V compound</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Point quantique</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Quantum dots</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Traitement par plasma</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Plasma assisted processing</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Réaction dirigée</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Template reaction</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Reacción dirigida</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Photoluminescence</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Photoluminescence</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Déplacement raie</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Spectral line shift</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Déplacement vers le bleu</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Blue shift</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Effet champ électrique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electric field effects</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Crystal structure</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Orientation cristalline</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Crystal orientation</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium nitride</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Confinement</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Confinement</s0><s5>29</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Recombinaison non radiative</s0><s5>30</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Non radiative recombination</s0><s5>30</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Recombinación no radiativa</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Puits quantique</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Quantum wells</s0><s5>31</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Polarité</s0><s5>32</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Polarity</s0><s5>32</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Polaridad</s0><s5>32</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>InGaN</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Substrat GaN</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>6855A</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8105E</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8107T</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>8535B</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>227</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1><s2>16</s2><s3>Berlin DEU</s3><s4>2010-08-22</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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